2SK3681-01 Fuji Semiconductor, 2SK3681-01 Datasheet
2SK3681-01
Manufacturer Part Number
2SK3681-01
Description
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.12Ohm; ID +/-43A; TO-247; PD 600W; VGS +/-30V
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3681-01.pdf
(1 pages)
Specifications of 2SK3681-01
Application
For switching regulators, UPS (Uninterrupted Power Supply), DC-DC converters
Channel Type
N-Channel
Current, Drain
±43 A
Current, Drain, Pulse
±172
Gate Charge, Total
112 nC
Operating And Storage Temperature
-55 to 150 °C
Package Type
TO-247
Polarization
N-Channel
Power Dissipation
600 W
Resistance, Drain To Source On
0.12 Ohm
Resistance, Thermal, Junction To Case
0.208 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
50 °C⁄W
Time, Turn-off Delay
190 ns
Time, Turn-on Delay
80 ns
Transconductance, Forward
30 S
Voltage, Breakdown, Drain To Source
600 V
Voltage, Diode Forward
1.00 V (Typ.)
Voltage, Drain To Source
600 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3681-01
Manufacturer:
FUJITSU
Quantity:
12 500
Company:
Part Number:
2SK3681-01
Manufacturer:
FE
Quantity:
5 288
2SK3681-01
Super FAP-G Series
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
*3 I
FUJI POWER MOSFET
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Repetitive or
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Thermalcharacteristics
Item
F
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Electrical characteristics (T
Features
< =
High speed switching
No secondary breadown
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
-I
D
, -di/dt=50A/µs, V
off
on
CC
< =
BV
DSS
c
Symbol Ratings
V
V
I
I
V
I
I
E
dV
dV/dt
P
T
T
, Tch 150°C
D
AS
AR
D(puls]
=25°C unless otherwise specified)
AS
D
ch
stg
DSX
GS
DS
DS
/dt
< =
R
R
Low on-resistance
DC-DC converters
Symbol
Low driving power
I
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
DSS
GSS
AV
th(ch-c)
th(ch-a)
r
f
rr
fs
(BR)DSS
GS(th)
oss
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
-55 to +150
±172
+150
600
600
±43
±30
808.9
600
43
21.5
20
5
2.50
Absolute maximum ratings
Test Conditions
V
V
R
V
V
V
I
I
channel to ambient
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=802 µ H T
I
I
-di/dt=100A/µs
channel to case
D
D
D
D
D
F
F
CC
GS
GS
DS
DS
GS
=26A
=21.5A
DS
GS
CC
GS
=43A V
=43A V
= 250 µ A
= 250 µ A
=43A
=300V I
=10V
=10
=600V V
=480V V
=±30V
=25V
=0V
=10V
=300V
Unit
mJ
kV/s
kV/µs
W
°C
°C
V
V
A
A
V
A
A
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
GS
ch
V
V
D
=0V T
=0V
DS
=25°C
GS
GS
=21.5A
V
Tch=25°C
*1
Tch 150°C
*1
L=802µH
V
VDS 600V
*3
Ta=25°C
Tc=25°C
DS
=10V
V
V
Remarks
GS
CC
GS
DS
=25V
=0V
=0V
=0V
< =
T
=60V *2
=-30V
=V
< =
=0V
ch
ch
=25°C
GS
=25°C
T
T
ch
ch
=125°C
=25°C
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
600
15
43
3.0
5360
Typ.
Typ.
680
190
112
10
30
40
80
87
44
34
40
22.0
0.12
1.00
0.98
Source(S)
Drain(D)
8040
1020
Max.
250
100
120
131
285
168
50.0
Max.
25
60
66
51
60
0.208
5.0
0.16
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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