NTE6400A NTE Electronics, Inc., NTE6400A Datasheet
NTE6400A
Manufacturer Part Number
NTE6400A
Description
Transistor, Unijunction; UJT; 600 mW (Stabilized); 2 A; 8 mA (Min.); 0.16 degC/
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE6400A.pdf
(2 pages)
Specifications of NTE6400A
Application
Used in oscillators, timing circuits, trigger circuits, and pulse generators
Current, Emitter
50 mA
Current, Peak
25 μA
Current, Valley
8 mA
Device Dissipation
600 mW
Package Type
TO-39
Power Dissipation
600 mW
Resistance, Interbase
12 kohm
Resistance, Thermal, Junction To Case
0.16 °C⁄mW
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-65 °C
Transistor Type
Unijunction
Voltage, Reverse
55 V
Description:
The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable
“N” type negative resistance characteristic over a wide temperature range. A stable peak point volt-
age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,
timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven-
tional silicon or germanium transistors.
These devices are intended for applications where circuit economy is of primary importance.
Absolute Maximum Ratings: (T
RMS Power Dissipation, P
RMS Emitter Current, I
Peak Emitter Current (T
Emitter Reverse Voltage (T
Interbase Voltage, V
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Intrinsic Standoff Ratio
Interbase Resistance
Modulated Interbase Current
Emitter Reverse Current
Peak Point Emitter Current
Valley Point Current
Base–One Peak Pulse Voltage
NTE6400
NTE6400A
NTE6400
NTE6400A
Unstabilized
Stabilized
NTE6400
NTE6400A
Unstabilized
Stabilized
Derate Above 25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BB
E
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +150 C), I
D
J
= +150 C)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
= +25 C unless otherwise specified)
opr
NTE6400 & NTE6400A
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Unijunction Transistor
Symbol
I
= +25 C unless otherwise specified)
B2(MOD)
R
V
I
BBO
EO
OB1
I
I
E(peak)
P
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
V
V
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BB
BB
BB
B2E
BB
BB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V, Note 1
= 3V, I
= 10V, I
= 25V
= 20V, R
Test Conditions
= 30V, I
E
E
= 0, Note 1
B1
B2
= 50mA
= 0
= 100
Min
0.4
6.8
54
4
–
–
–
8
3
Typ
–
–
–
–
–
–
–
–
–
–65 to +140 C
–65 to +175 C
–65 to +175 C
Max
0.80
0.67
12
30
12
25
0.16 C/mW
1
–
–
3.9mW/ C
450mW
600mW
50mA
Unit
mA
mA
k
V
60V
35V
55V
A
A
2A
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NTE6400A Summary of contents
Page 1
... Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point volt- age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators, timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven- tional silicon or germanium transistors ...
Page 2
Note 1. The intristic standoff ratio essentially constant with temperature and interbase volt- age defined by the following equation Where V = Peak point emitter voltage Interbase voltage BB T ...