NTE6400A NTE Electronics, Inc., NTE6400A Datasheet - Page 2

• Manufacturer Part Number: NTE6400A
• Description: Transistor, Unijunction; UJT; 600 mW (Stabilized); 2 A; 8 mA (Min.); 0.16 degC/
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE6400A

• Application: Used in oscillators, timing circuits, trigger circuits, and pulse generators
• Current, Emitter: 50 mA
• Current, Peak: 25 μA
• Current, Valley: 8 mA
• Device Dissipation: 600 mW
• Package Type: TO-39
• Power Dissipation: 600 mW
• Resistance, Interbase: 12 kohm
• Resistance, Thermal, Junction To Case: 0.16 °C⁄mW
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -65 °C
• Transistor Type: Unijunction
• Voltage, Reverse: 55 V

Note 1. The intristic standoff ratio, , is essentially constant with temperature and interbase volt-
Note 2. The interbase resistance is nearly ohmic and increases with temperature in a well–defined
age. It is defined by the following equation:
manner. The temperature coefficient at +25 C is approximately 0.8%/ C.
Where V
V
V
T
j
P
BB
P
=
= Peak point emitter voltage
= Interbase voltage
= Junction Temperature (Degrees Kelvin)
V
BB
.500 (12.7)
.260 (6.6)
B2
+
Max
Min
200
T
45
j
.031 (.793)
.210 (5.33) Dia Max
.018 (0.45) Dia
Emitter
B1
.370 (9.39) Dia Max
.355 (9.03) Dia Max