PIC12F683-E/P Microchip Technology Inc., PIC12F683-E/P Datasheet - Page 111

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PIC12F683-E/P

Manufacturer Part Number
PIC12F683-E/P
Description
8 PIN, 3.5 KB FLASH, 128 RAM, 6 I/O, PDIP
Manufacturer
Microchip Technology Inc.
Datasheet

Specifications of PIC12F683-E/P

A/d Inputs
4 Channel, 10-Bit
Comparators
1
Cpu Speed
5 MIPS
Eeprom Memory
256 Bytes
Frequency
20 MHz
Input Output
6
Memory Type
Flash
Number Of Bits
8
Package Type
8-pin PDIP
Programmable Memory
3.5K Bytes
Ram Size
128 Bytes
Serial Interface
None
Speed
20 MHz
Timers
2-8-bit, 1-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
15.0
Absolute Maximum Ratings
Ambient temperature under bias....................................................................................................... -40°C to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by GPIO ..................................................................................................................... 200 mA
Maximum current sourced GPIO..................................................................................................................... 200 mA
Note 1:
 2004 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
ELECTRICAL SPECIFICATIONS
Power dissipation is calculated as follows: P
Voltage spikes below V
Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin, rather than
pulling this pin directly to V
DD
with respect to V
IK
(1)
OK
(V
DD
............................................................................................................................... 800 mW
I
SS
(Vo < 0 or Vo >V
< 0 or V
pin ........................................................................................................................ 250 mA
pin ..................................................................................................................... 300 mA
SS
I
SS
> V
................................................................................................... -0.3V to +6.5V
(†)
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
DD
.
SS
)
DD
........................................................................... -0.3V to (V
)
Preliminary
DIS
= V
DD
x {I
DD
- ∑ I
OH
} + ∑ {(V
DD
PIC12F683
- V
OH
) x I
DS41211B-page 109
OH
} + ∑(V
DD
+ 0.3V)
20 mA
20 mA
O
l x I
OL
).

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