SI4488DY-T1-E3/BKN Siliconix / Vishay, SI4488DY-T1-E3/BKN Datasheet - Page 3

• Manufacturer Part Number: SI4488DY-T1-E3/BKN
• Description: MOSFET; SOIC8 150V N-Channel Trench
• Manufacturer: Siliconix / Vishay

Specifications of SI4488DY-T1-E3/BKN

• Channel Type: N
• Current, Drain: 5.00 A
• Fall Time: 15 ns
• Gate Charge, Total: 36 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: SO-8
• Polarization: Dual N-Channel
• Power Dissipation: 1.4 W
• Resistance, Drain To Source On: 0.500 Ohm
• Temperature, Operating, Maximum: +150 –55 to +150
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 40 °C/W
• Time, Rise: 11 ns
• Time, Turn-off Delay: 33 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5 A
0.2
On-Resistance vs. Drain Current
= 75 V
10
V
15
SD
Q
T
V
g
- Source-to-Drain Voltage (V)
J
0.4
GS
- Total Gate Charge (nC)
I
D
= 150 °C
Gate Charge
- Drain Current (A)
= 10 V
20
0.6
30
30
0.8
T
45
J
= 25 °C
40
1.0
1.2
60
50
3000
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 5 A
C
= 10 V
rss
30
2
T
0
V
V
J
GS
DS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
60
4
50
C
C
Vishay Siliconix
oss
iss
90
I
D
6
75
= 5 A
Si4488DY
100
www.vishay.com
120
8
125
150
150
10
3