SI4431BDY-T1-E3/BKN Siliconix / Vishay, SI4431BDY-T1-E3/BKN Datasheet - Page 4

• Manufacturer Part Number: SI4431BDY-T1-E3/BKN
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI4431BDY-T1-E3/BKN

• Channel Type: P
• Current, Drain: –5.8 A
• Fall Time: 70 ns
• Gate Charge, Total: 20 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 1.5 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 50 °C/W
• Time, Rise: 20 ns
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: –30 V
• Voltage, Forward, Diode: –1.1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si4431BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.05
0.02
Single Pulse
0.2
0.1
0
Threshold Voltage
T
J
- T emperature (°C)
10
2 5
I
D
- 3
= 250 µA
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
7 5
0.01
100
0.1
10
10
100
1
0.1
- 2
Limited by R
* V
Limited
I
125
D(on)
GS
Single Pulse
T
> minimum V
A
V
= 25 °C
DS
150
Square Wave Pulse Duration (s)
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
10
1
- 1
GS
BVDSS Limited
at which R
DS(on)
10
50
40
30
20
10
1
0
10
I
DM
is specified
- 3
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
- 2
100
1 0
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
- 1
- T
Time (s)
t
1
A
S09-0131-Rev. C, 02-Feb-09
= P
t
2
Document Number: 72092
1
DM
Z
th J A
100
th J A
t
t
1
2
(t )
10
= 70 °C/W
100
600
600