SI4431BDY-T1-E3/BKN Siliconix / Vishay, SI4431BDY-T1-E3/BKN Datasheet - Page 3

• Manufacturer Part Number: SI4431BDY-T1-E3/BKN
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI4431BDY-T1-E3/BKN

• Channel Type: P
• Current, Drain: –5.8 A
• Fall Time: 70 ns
• Gate Charge, Total: 20 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 1.5 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 50 °C/W
• Time, Rise: 20 ns
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: –30 V
• Voltage, Forward, Diode: –1.1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
Source-Drain Diode Forward Voltage
GS
= 7.5 A
0.2
On-Resistance vs. Drain Current
5
= 15 V
= 4.5 V
5
V
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
10
I
D
T
- Drain Current (A)
Gate Charge
J
10
= 150 °C
0.6
15
0.8
15
20
T
J
1.0
= 25 °C
V
GS
20
= 10 V
25
1.2
30
25
1.4
1600
1400
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 7.5 A
I
D
= 10 V
= 2 A
2
6
V
V
GS
DS
0
T
C
J
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
12
4
C
5 0
I
D
Vishay Siliconix
iss
= 7.5 A
Si4431BDY
18
6
7 5
www.vishay.com
100
24
8
125
150
10
30
3