SI4431BDY-T1-E3/BKN Siliconix / Vishay, SI4431BDY-T1-E3/BKN Datasheet - Page 5

• Manufacturer Part Number: SI4431BDY-T1-E3/BKN
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI4431BDY-T1-E3/BKN

• Channel Type: P
• Current, Drain: –5.8 A
• Fall Time: 70 ns
• Gate Charge, Total: 20 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 1.5 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 50 °C/W
• Time, Rise: 20 ns
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: –30 V
• Voltage, Forward, Diode: –1.1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72092.
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
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0.1
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1
10
-4
0.05
Duty Cycle = 0.5
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Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
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1
Vishay Siliconix
Si4431BDY
www.vishay.com
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