PIC24EP64MC204-E/PT Microchip Technology, PIC24EP64MC204-E/PT Datasheet - Page 118

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PIC24EP64MC204-E/PT

Manufacturer Part Number
PIC24EP64MC204-E/PT
Description
16 Bit MCU, 64KB Flash, 8KB RAM, 60 MHz, 44 Pin, MCPWM,QEI, 3 OpAmp, 4 Comp, PTG
Manufacturer
Microchip Technology
Datasheet

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dsPIC33EPXXXGP50X, dsPIC33EPXXXMC20X/50X, AND PIC24EPXXXGP/MC20X
5.2
RTSP allows the user application to erase a single
page of memory, and to program two instruction words
at a time. See the General Purpose and Motor Control
Family tables
page sizes of each device.
For more information on erasing and programming
Flash memory, refer to Section 5. “Flash Program-
ming” (DS70609) in the “dsPIC33E/PIC24E Family
Reference Manual”.
5.3
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode.
programming operation is finished.
For erase and program times, refer to parameters
DI37a and DI37b (Page Erase Time), and DI38a and
DI38b (Word Write Cycle Time), in
Characteristics: Program
Setting the WR bit (NVMCON<15>) starts the opera-
tion, and the WR bit is automatically cleared when the
operation is finished.
5.3.1
Programmers can program two adjacent words
(24 bits x 2) of program Flash memory at a time on
every other word address boundary (0x000002,
0x000006, 0x00000A, etc.). To do this, it is necessary
to erase page that contains the desired address of the
location the user wants to change.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
application must wait for the programming time until
programming is complete. The two instructions follow-
ing the start of the programming sequence should be
NOPs.
Refer to Section 5. “Flash Programming” (DS70609)
in the “dsPIC33E/PIC24E Family Reference Manual”
for details and codes examples on programming using
RTSP.
DS70657F-page 118
The
RTSP Operation
Programming Operations
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
(Table 1
processor
and
Memory”.
Table
stalls
, respectively) for the
(waits)
Table 30-13: “DC
until
the
5.4
Many useful resources are provided on the main prod-
uct page of the Microchip web site for the devices listed
in this data sheet. This product page, which can be
accessed using this link, contains the latest updates
and additional information.
5.4.1
• Section 5. “Flash Programming” (DS70609)
• Code Samples
• Application Notes
• Software Libraries
• Webinars
• All related dsPIC33E/PIC24E Family Reference
• Development Tools
5.5
Four SFRs are used to read and write the program
Flash memory: NVMCON, NVMKEY, NVMADRU, and
NVMADR.
The NVMCON register
blocks are to be erased, which memory type is to be
programmed and the start of the programming cycle.
NVMKEY
used for write protection. To start a programming or
erase
consecutively write 0x55 and 0xAA to the NVMKEY
register.
There are two NVM address registers: NVMADRU and
NVMADR. These two registers, when concatenated,
form the 24-bit effective address (EA) of the selected
word for programming operations, or the selected page
for erase operations.
The NVMADRU register is used to hold the upper 8 bits
of the EA, while the NVMADR register is used to hold
the lower 16 bits of the EA.
Note:
Manuals Sections
sequence,
Flash Memory Resources
Control Registers
(Register
In the event you are not able to access the
product page using the link above, enter
this URL in your browser:
http://www.microchip.com/wwwproducts/
Devices.aspx?dDocName=en555464
KEY RESOURCES
 2011-2012 Microchip Technology Inc.
5-4) is a write-only register that is
the
(Register
user
5-1) controls which
application
must

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