MK60DN512ZVMD10 Freescale Semiconductor, MK60DN512ZVMD10 Datasheet - Page 34

• Manufacturer Part Number: MK60DN512ZVMD10
• Description: KINETIS 512K ENET
• Manufacturer: Freescale Semiconductor

Specifications of MK60DN512ZVMD10

• Processor Series: K60
• Core: ARM Cortex M4
• Data Bus Width: 16 bit
• Program Memory Type: Flash
• Program Memory Size: 512 KB
• Data Ram Size: 128 KB
• Interface Type: USB, CAN, SPI, I2C, UART
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 2
• Number Of Timers: 2
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-144
• Operating Temperature Range: - 40 C to + 105 C
• Processor To Be Evaluated: MK60DN512ZVMD10
• Supply Current (max): 185 mA
• Lead Free Status / Rohs Status: No

Peripheral operating requirements and behaviors
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
6.4.1.4 Reliability specifications
34
t
t
t
t
t
t
t
t
t
t
t
eewr16b128k
eewr16b256k
t
eewr32b128k
eewr32b256k
t
t
t
eewr8b128k
eewr8b256k
eewr16b32k
eewr16b64k
eewr32b32k
eewr32b64k
eewr16bers
eewr32bers
nvmretp10k
Symbol
eewr8b32k
eewr8b64k
Symbol
I
Symbol
DD_PGM
Byte-write to FlexRAM execution time:
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Data retention after up to 10 K cycles
Description
Description
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Table 21. Flash command timing specifications (continued)
Worst case programming current in program flash
Description
Table 22. Flash (FTFL) current and power specfications
K60 Sub-Family Data Sheet Data Sheet, Rev. 6, 9/2011.
Table 23. NVM reliability specifications
Longword-write to FlexRAM for EEPROM operation
Word-write to FlexRAM for EEPROM operation
Table continues on the next page...
Program Flash
Min.
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
1000
1000
1200
1900
Typ.
Typ.
385
475
650
175
385
475
650
360
630
810
50
1
1800
2000
2400
3200
1800
2000
2400
3200
2050
2250
2675
3500
Max.
Max.
Typ.
260
540
10
—
Freescale Semiconductor, Inc.
years
Unit
Unit
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Unit
mA
Notes
Notes
2