MK60DN512ZVMD10 Freescale Semiconductor, MK60DN512ZVMD10 Datasheet - Page 35

• Manufacturer Part Number: MK60DN512ZVMD10
• Description: KINETIS 512K ENET
• Manufacturer: Freescale Semiconductor

Specifications of MK60DN512ZVMD10

• Processor Series: K60
• Core: ARM Cortex M4
• Data Bus Width: 16 bit
• Program Memory Type: Flash
• Program Memory Size: 512 KB
• Data Ram Size: 128 KB
• Interface Type: USB, CAN, SPI, I2C, UART
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 2
• Number Of Timers: 2
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-144
• Operating Temperature Range: - 40 C to + 105 C
• Processor To Be Evaluated: MK60DN512ZVMD10
• Supply Current (max): 185 mA
• Lead Free Status / Rohs Status: No

1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
Freescale Semiconductor, Inc.
n
n
n
t
n
n
t
t
t
t
nvmretee100
t
t
t
nvmwree128
nvmwree512
nvmretp100
nvmretd10k
nvmretd100
nvmretee10
nvmwree32k
n
n
Symbol
nvmwree16
nvmretp1k
nvmretd1k
nvmretee1
nvmwree4k
nvmcycp
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
Table 23. NVM reliability specifications (continued)
K60 Sub-Family Data Sheet Data Sheet, Rev. 6, 9/2011.
javg
= 55°C (temperature profile over the lifetime of the application).
FlexRAM as EEPROM
Data Flash
1.27 M
315 K
10 M
80 M
10 K
10 K
35 K
Min.
10
15
10
15
10
15
5
5
Peripheral operating requirements and behaviors
400 M
175 K
1.6 M
6.4 M
Typ.
50 M
j
35 K
35 K
100
100
100
100
100
100
≤ 125°C.
50
50
1
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
cycles
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
years
years
years
Unit
Notes
2
2
3
2
2
2
3
2
2
2
4
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