PSMN1R1-30PL,127 NXP Semiconductors, PSMN1R1-30PL,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R1-30PL,127
• Description: MOSFET Power N-Ch 30V 1.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R1-30PL,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 243 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Input Capacitance (ciss) @ Vds: 14850pF @ 15V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065166127

NXP Semiconductors
PSMN1R1-30PL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS (th)
(V)
a
1.5
0.5
3
2
1
0
2
1
0
-60
junction temperature
-60
factor as a function of junction temperature
0
0
max
min
typ
60
60
120
120
All information provided in this document is subject to legal disclaimers.
003a a c982
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T
T
j
j
(°C)
(°C)
180
180
Rev. 02 — 19 April 2011
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
10
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
2.6
DS
GS(th)
GS
Q
GS1
100
I
Q
D
PSMN1R1-30PL
GS
Q
GS2
2.8
Q
G(tot)
V
GS
Q
200
GD
(V) = 3
4.5
© NXP B.V. 2011. All rights reserved.
I
D
003aaa508
003aad012
(A)
3.5
10
300
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