PSMN1R1-30EL,127 NXP Semiconductors, PSMN1R1-30EL,127 Datasheet
PSMN1R1-30EL,127
Specifications of PSMN1R1-30EL,127
Related parts for PSMN1R1-30EL,127
PSMN1R1-30EL,127 Summary of contents
Page 1
... PSMN1R1-30EL N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK Rev. 2 — 15 April 2011 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
Page 2
... Ω; unclamped avalanche energy R GS Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min = Figure 14 °C; - j(init) ≤ sup Graphic symbol G mbb076 © NXP B.V. 2011. All rights reserved. ...
Page 3
... V sup GS 003a a f774 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 - ° 120 A ...
Page 4
... PSMN1R1-30EL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK D 1 Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL =10 μ 100 μ 100 (V) DS Min Typ - 0.22 ...
Page 5
... Figure 4 see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min Typ Max Unit 1.3 1.7 2 0.02 10 µA - 250 500 µ ...
Page 6
... A/µ 003aaf762 ( (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min Typ Max - 213 - - 199 - - 115 - - 0.8 1 123 - 003aaf763 = 175 ° ° C ...
Page 7
... C iss 10 C rss (V) GS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL 300 10 D 4.5 3.5 250 200 150 100 Output characteristics: drain current as a function of drain-source voltage; typical values ...
Page 8
... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003a a f767 120 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL 003aad012 2 2.6 GS 4.5 0 100 200 ...
Page 9
... G Fig 16. Input, output and reverse transfer capacitances ( 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL function of drain-source voltage; typical values 003aaf770 = 25 ° 0 (V) SD © NXP B.V. 2011. All rights reserved. ...
Page 10
... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © ...
Page 11
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R1-30EL v.2 20110415 • Modifications: Status changed from objective to product. PSMN1R1-30EL v.1 20110203 PSMN1R1-30EL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK Data sheet status Change notice Product data sheet ...
Page 12
... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL © NXP B.V. 2011. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Trademarks © NXP B.V. 2011. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 April 2011 Document identifier: PSMN1R1-30EL ...