PSMN1R1-30EL NXP Semiconductors, PSMN1R1-30EL Datasheet
PSMN1R1-30EL
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PSMN1R1-30EL Summary of contents
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... PSMN1R1-30EL N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK Rev. 2 — 15 April 2011 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... R GS Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min = Figure 14 °C; - j(init) ≤ sup Graphic symbol ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 -55 ...
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... Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK D 1 Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL =10 μ 100 μ 100 (V) DS Min ...
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... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min Typ Max Unit 1.3 1.7 2 ...
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... V DS 003aaf762 ( (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Min Typ Max - 213 - - 199 - - 115 - - 0.8 1 ...
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... C iss 10 C rss (V) GS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL 300 10 D 4.5 3.5 250 200 150 100 Output characteristics: drain current as a function of drain-source voltage; typical values ...
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... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003a a f767 120 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL 003aad012 2 2.6 GS 4.5 0 100 200 ...
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... Fig 16. Input, output and reverse transfer capacitances ( 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL function of drain-source voltage; typical values 003aaf770 = 25 ° 0 ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R1-30EL v.2 20110415 • Modifications: Status changed from objective to product. PSMN1R1-30EL v.1 20110203 PSMN1R1-30EL Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN1R1-30EL Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 April 2011 Document identifier: PSMN1R1-30EL ...