PSMN1R1-30EL,127 NXP Semiconductors, PSMN1R1-30EL,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R1-30EL,127
• Description: MOSFET Power N-Ch 30V 1.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R1-30EL,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 243 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Input Capacitance (ciss) @ Vds: 14850pF @ 15V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065159127

NXP Semiconductors
PSMN1R1-30EL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
= 6V
24V
15V
100
200
(A)
I
S
75
60
45
30
15
0
Q
0
All information provided in this document is subject to legal disclaimers.
G
003aaf768
(nC)
0.2
300
T
j
Rev. 2 — 15 April 2011
= 175 ° C
0.4
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Fig 16. Input, output and reverse transfer capacitances
0.6
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
0.8
T
-1
003aaf770
j
= 25 ° C
V
SD
(V)
1
1
PSMN1R1-30EL
10
V
© NXP B.V. 2011. All rights reserved.
DS
003aaf769
(V)
C
C
C
oss
rss
iss
10
2
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