PSMN2R0-60ES,127 NXP Semiconductors, PSMN2R0-60ES,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R0-60ES,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065162127

NXP Semiconductors
PSMN2R0-60ES
Product data sheet
Fig 7.
Fig 9.
R
(m Ω )
DSon
(A)
I
D
200
150
100
12
10
50
8
6
4
2
0
0
of gate-source voltage; typical values
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
Output characteristics: drain current as a
0
0
10
8
0.5
5
5
6
10
1
V
1.5
15
GS
All information provided in this document is subject to legal disclaimers.
V
(V) = 4
003aaf744
003aad674
V
GS
DS
4.5
(V)
(V)
20
2
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(pF)
10
10
10
10
C
5
4
3
2
5
4
3
2
1
0
10
−60
function of gate-source voltage, typical values
junction temperature
Input and reverse transfer capacitances as a
-1
0
1
PSMN2R0-60ES
60
max
min
typ
10
120
V
© NXP B.V. 2011. All rights reserved.
GS
C
C
003aaf746
003aad280
T
iss
(V)
rss
j
(°C)
10
180
2
8 of 15