PSMN4R3-80PS,127 NXP Semiconductors, PSMN4R3-80PS,127 Datasheet

MOSFET Power N-Ch 80V 4.3 mOhms

PSMN4R3-80PS,127

Manufacturer Part Number
PSMN4R3-80PS,127
Description
MOSFET Power N-Ch 80V 4.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PSMN4R3-80PS,127

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
104 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
111nC @ 10V
Input Capacitance (ciss) @ Vds
8161pF @ 40V
Power - Max
306W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
 Details
Other names
934065171127
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN4R3-80PS
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
Rev. 03 — 18 April 2011
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switch
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state resistance
Conditions
T
T
see
T
V
T
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 25 °C; see
= 100 °C; see
Figure 1
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 25 A;
= 25 A;
Figure 13
Figure 12
Figure 2
= 10 V;
Suitable for standard level gate drive
Motor control
Server power supplies
[1]
[2]
[2]
Min
-
-
-
-55
-
-
Product data sheet
Typ
-
-
-
-
3.7
6.1
Max Unit
80
120
306
175
4.3
7.1
V
A
W
°C
mΩ
mΩ

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PSMN4R3-80PS,127 Summary of contents

Page 1

... PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 03 — 18 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... Ω; unclamped avalanche energy R GS Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS Min Typ = 28 Figure 14; - 111 = 25 ° j(init) ≤ sup ...

Page 3

... V sup GS 003aaf630 120 P der (%) 150 200 0 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 - °C ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R3-80PS Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 = All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS 003aaf676 =10 μ 100 μ 100 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R3-80PS Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS Min Typ Max - 0.3 0. 003aaf629 δ ...

Page 6

... see Figure 14; see Figure see D DS see Figure MHz °C; see Figure 0.53 Ω 4.7 Ω G(ext) D All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS Min Typ Max 4 0. 500 - - 100 - - 100 [1] - 8.9 10.3 [1] - 3.7 4.3 ...

Page 7

... GS see Figure /dt = 100 A/µ 003aaf619 (A) D Fig 6. 003aaf621 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS Min Typ = 25 ° 109 ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 100 I D (A) 8 ...

Page 8

... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normailzed drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 a 2.4 1 ...

Page 9

... N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 003aaf628 V (V) = 4.5 GS 6.0 20 (A) D Fig 14. Gate charge waveform definitions 003aaf625 (pF) 90 120 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS GS(pl) V GS(th GS1 GS2 G(tot ...

Page 10

... PSMN4R3-80PS Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS 003aaf627 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 12

... N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS Supersedes PSMN4R3-80PS v.2 PSMN4R3-80PS v.1 © NXP B.V. 2011. All rights reserved ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 PSMN4R3-80PS Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 April 2011 Document identifier: PSMN4R3-80PS ...

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