PSMN4R3-80ES NXP Semiconductors, PSMN4R3-80ES Datasheet
PSMN4R3-80ES
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PSMN4R3-80ES Summary of contents
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... PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 02 — 18 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Graphic symbol mbb076 Version SOT226 © NXP B.V. 2011. All rights reserved ...
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... P der (%) 150 200 0 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 - [1] ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R3-80ES Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK = All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES 003aaf676 =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R3-80ES Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min Typ Max - 0.22 0. 003aaf629 δ ...
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... MHz °C; see Figure 0.53 Ω 4.7 Ω G(ext All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min Typ Max = -55 ° ° 4 0.02 ...
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... A/µ 003aaf619 (A) D Fig 6. 003aaf621 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min Typ = 25 ° 109 ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...
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... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normailzed drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
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... GS 6.0 20 (A) D Fig 14. Gate charge waveform definitions 003aaf625 (pF) 90 120 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES 003aaf627 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN4R3-80ES v.2 20110418 • Modifications: Status changed from objective to product. • Various changes to content. PSMN4R3-80ES v.1 20101228 PSMN4R3-80ES Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Data sheet status Change notice ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 April 2011 Document identifier: PSMN4R3-80ES ...