PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet

PSMN4R3-80ES,127

Manufacturer Part Number

PSMN4R3-80ES,127

Description

MOSFET Power N-Ch 80V 4.3 mOhms

Manufacturer

NXP Semiconductors

Series

-r

Datasheet

1.PSMN4R3-80ES127.pdf (15 pages)

Specifications of PSMN4R3-80ES,127

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4.3 mOhms

Drain-source Breakdown Voltage

80 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

120 A

Power Dissipation

306 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

I2PAK

Gate Charge Qg

104 nC

Minimum Operating Temperature

- 55 C

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

4.3 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

80V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

111nC @ 10V

Input Capacitance (ciss) @ Vds

8161pF @ 40V

Power - Max

306W

Mounting Type

Through Hole

Lead Free Status / Rohs Status

Details

Other names

934065164127

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

Table 1.

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Rev. 02 — 18 April 2011

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switch

Quick reference data

Parameter

drain-source voltage T

drain current

total power

dissipation

junction temperature

drain-source

on-state resistance

gate-drain charge

total gate charge

non-repetitive

drain-source

avalanche energy

Conditions

see

≥ 25 °C; T

= 25 °C; see

= 100 °C; see

= 120 A; V

= 25 °C; V

Figure 1

= 25 °C; see

Figure 15

= 40 V; see

= 10 V; I

= 10 V; T

= 50 Ω; unclamped

sup

≤ 175 °C

j(init)

= 25 A;

= 75 A;

Figure 13

Figure

≤ 80 V;

Figure 12

Figure 2

= 10 V;

= 25 °C;

Suitable for standard level gate drive

Motor control

Server power supplies

14;

[1]

[2]

Min

-55

Product data sheet

Typ

3.7

6.1

111

Max Unit

120

306

175

4.3

7.1

676

°C

mΩ

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PSMN4R3-80ES,127 Summary of contents

Page 1

... PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 02 — 18 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Graphic symbol mbb076 Version SOT226 © NXP B.V. 2011. All rights reserved ...

Page 3

... V sup GS 003aaf630 120 P der (%) 150 200 0 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 - 120 A; ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R3-80ES Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK = All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES 003aaf676 =10 μ 100 μ 100 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R3-80ES Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min Typ Max - 0.22 0. 003aaf629 δ ...

Page 6

... Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 0.53 Ω 4.7 Ω G(ext All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min Typ Max = -55 ° ° 4 0. 500 = 25 ° 100 - - 100 [1] - 8.9 10 ...

Page 7

... GS see Figure /dt = 100 A/µ 003aaf619 (A) D Fig 6. 003aaf621 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Min Typ = 25 ° 109 ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 100 I D (A) 8 ...

Page 8

... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normailzed drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 a 2.4 1 ...

Page 9

... N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 003aaf628 V (V) = 4.5 GS 6.0 20 (A) D Fig 14. Gate charge waveform definitions 003aaf625 (pF) 90 120 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES GS(pl) V GS(th GS1 GS2 G(tot ...

Page 10

... PSMN4R3-80ES Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES 003aaf627 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...

Page 11

... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN4R3-80ES v.2 20110418 • Modifications: Status changed from objective to product. • Various changes to content. PSMN4R3-80ES v.1 20101228 PSMN4R3-80ES Product data sheet N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Data sheet status ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 PSMN4R3-80ES Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 April 2011 Document identifier: PSMN4R3-80ES ...

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