SI4927DY-T1-E3 Vishay, SI4927DY-T1-E3 Datasheet

SI4927DY-T1-E3

Manufacturer Part Number

SI4927DY-T1-E3

Description

MOSFET Power 30V 7.4A 2.5W

Manufacturer

Vishay

Datasheet

1.SI4927DY-T1-E3.pdf (5 pages)

Specifications of SI4927DY-T1-E3

Configuration

Dual Common Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.028 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

7.4 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4927DY-T1-E3

Manufacturer:

Vishay/Siliconix

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4927DY-T1-E3

Manufacturer:

VISHAY

Quantity:

12 961

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4927DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70808

S-59519—Rev. B, 04-Sep-98

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Surface Mounted on FR4 Board.

t =

–30

(V)

10 sec.

0.045 @ V

a, b

0.028 @ V

= 150 C)

DS(on)

P-Channel 30-V (D-S) Battery Switch

Parameter

Top View

SO-8

a, b

( )

= –4.5 V

= –10 V

a, b

(A)

7.4

5.8

Steady State

t =

= 25 C

= 70 C

= 25 C

= 70 C

10 sec

P-Channel MOSFET

Symbol

, T

thJA

stg

Typical

www.vishay.com FaxBack 408-970-5600

–55 to 150

P-Channel MOSFET

Limit

Vishay Siliconix

–2.1

–30

2.5

1.6

7.4

5.8

Maximum

Si4927DY

Unit

C/W

2-1

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