SI4927DY-T1-E3 Vishay, SI4927DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4927DY-T1-E3
• Description: MOSFET Power 30V 7.4A 2.5W
• Manufacturer: Vishay

Specifications of SI4927DY-T1-E3

• Configuration: Dual Common Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.4 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Document Number: 70808
S-59519—Rev. B, 04-Sep-98
0.20
0.16
0.12
0.08
0.04
40
32
24
16
10
8
0
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 7.4 A
On-Resistance vs. Drain Current
V
= 15 V
2
8
8
DS
V
Q
GS
Output Characteristics
g
– Drain-to-Source Voltage (V)
V
I
= 5 thru 10 V
D
– Total Gate Charge (nC)
GS
– Drain Current (A)
Gate Charge
= 4.5 V
16
16
4
24
24
6
3 V
V
4 V
GS
32
32
8
= 10 V
10
40
40
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
8
0
0
–50
0
0
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
= 7.4 A
C
1
V
V
rss
6
= 10 V
DS
GS
T
T
Transfer Characteristics
C
J
0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
= 125 C
25 C
– Gate-to-Source Voltage (V)
2
C
Capacitance
25
oss
12
www.vishay.com FaxBack 408-970-5600
50
3
Vishay Siliconix
18
C
75
iss
–55 C
4
Si4927DY
100
24
5
125
150
30
6
2-3