SI4927DY-T1-E3 Vishay, SI4927DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4927DY-T1-E3
• Description: MOSFET Power 30V 7.4A 2.5W
• Manufacturer: Vishay

Specifications of SI4927DY-T1-E3

• Configuration: Dual Common Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.4 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

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2-4
Si4927DY
Vishay Siliconix
0.01
0.1
–0.2
–0.4
2
1
0.8
0.6
0.4
0.2
0.0
10
40
10
1
–50
–4
0
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
–25
Single Pulse
Source-Drain Diode Forward Voltage
0.2
V
SD
T
0
J
– Source-to-Drain Voltage (V)
0.4
= 150 C
Threshold Voltage
T
I
10
D
J
– Temperature ( C)
–3
= 250 A
25
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
75
T
10
J
= 25 C
–2
1
100
125
1.2
Square Wave Pulse Duration (sec)
1.4
150
10
–1
0.10
0.08
0.06
0.04
0.02
1
60
45
30
15
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
– Gate-to-Source Voltage (V)
0.1
10
Single Pulse Power
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
P
DM
JM
– T
Time (sec)
4
A
t
1
= P
t
2
DM
Z
1
thJA
6
thJA
S-59519—Rev. B, 04-Sep-98
100
I
D
Document Number: 70808
(t)
t
t
1
2
= 75 C/W
= 7.4 A
8
10
600
10
30