FDMS3600S Fairchild Semiconductor, FDMS3600S Datasheet - Page 12

• Manufacturer Part Number: FDMS3600S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3600S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms, 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S, 171 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A, 30 A
• Power Dissipation: 2.2 W, 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0043ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
2. Recommended PCB Layout Guidelines
As a PCB designer, it is necessary to address critical issues in layout to minimize losses and optimize the performance of the power
train. Power Stage is a high power density solution and all high current flow paths, such as VIN (D1), PHASE (S1/D2) and GND (S2),
should be short and wide for better and stable current flow, heat radiation and system performance. A recommended layout proce-
dure is discussed below to maximize the electrical and thermal performance of the part.
Figure 30. Shows the Power Stage in a buck converter topology
Figure 31. Recommended PCB Layout
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