FDMS3600S Fairchild Semiconductor, FDMS3600S Datasheet - Page 7

• Manufacturer Part Number: FDMS3600S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3600S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms, 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S, 171 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A, 30 A
• Power Dissipation: 2.2 W, 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0043ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
Typical Characteristics (Q2 N-Channel)
100
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
80
60
40
20
0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
0.0
1.0
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 30 A
vs Junction Temperature
= 5 V
= 10 V
V
GS
0.2
V
V
T
DS
-25
GS
J
= 3 V
1.5
,
V
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
GS
DRAIN TO SOURCE VOLTAGE (V)
V
= 3.5 V
0
GS
0.4
V
= 4 V
T
GS
J
T
25
μ
= 25
= 4.5 V
J
s
2.0
V
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
o
50
= 10 V
C
0.6
o
C
75
2.5
o
T
100 125 150
C )
0.8
J
= -55
o
μ
C
s
1.0
3.0
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
200
100
0.1
10
1
8
6
4
2
0
4
3
2
1
0
0.0
Figure 17. On-Resistance vs Gate to
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
Current and Gate Voltage
= 0 V
V
V
0.2
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
20
V
= 3 V
T
GS
J
I
Source Voltage
D
4
,
= 125
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
T
0.4
J
V
J
= 125
GS
= 25
T
o
C
J
40
= 3.5 V
= -55
T
o
o
C
J
C
μ
0.6
= 25
s
6
o
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
I
D
o
= 30 A
C
V
60
GS
0.8
= 4 V
8
www.fairchildsemi.com
80
V
V
1.0
GS
GS
= 4.5 V
= 10 V
μ
s
1.2
100
10