FDMS3600S Fairchild Semiconductor, FDMS3600S Datasheet - Page 6

• Manufacturer Part Number: FDMS3600S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3600S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms, 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S, 171 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A, 30 A
• Power Dissipation: 2.2 W, 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0043ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
Typical Characteristics (Q1 N-Channel)
0.001
0.01
0.1
1
2
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (sec)
SINGLE PULSE
R
(
Note 1c
θ
JA
= 125
10
-1
T
)
J
o
6
= 25 °C unless otherwise noted
C/W
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
100
t
1
+ T
t
2
A
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