FDMS3600S Fairchild Semiconductor, FDMS3600S Datasheet - Page 3

MOSFET Power 25V Dual N-Channel PowerTrench MOSFET

FDMS3600S

Manufacturer Part Number
FDMS3600S
Description
MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS3600S

Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.6 mOhms, 1.6 mOhms
Forward Transconductance Gfs (max / Min)
67 S, 171 S
Drain-source Breakdown Voltage
25 V
Continuous Drain Current
15 A, 30 A
Power Dissipation
2.2 W, 2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Gate Charge Qg
19 nC
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
40A
Drain Source Voltage Vds
25V
On Resistance Rds(on)
0.0043ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / Rohs Status
 Details
©2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4: E
5: E
V
t
Q
rr
SD
rr
by the user's board design.
Symbol
θJA
AS
AS
of 50 mJ is based on starting T
of 200 mJ is based on starting T
is determined with the device mounted on a 1 in
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
= 25
= 25
a. 57 °C/W when mounted on
c. 125 °C/W when mounted on a
a 1 in
minimum pad of 2 oz copper
o
C; N-ch: L = 1 mH, I
o
C; N-ch: L = 1 mH, I
2
pad of 2 oz copper
T
J
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25 °C unless otherwise noted
AS
AS
= 10 A, V
= 20 A, V
V
V
Q1
I
Q2
I
F
F
GS
GS
= 15 A, di/dt = 100 A/μs
= 30 A, di/dt = 300 A/μs
DD
= 0 V, I
= 0 V, I
DD
= 23 V, V
= 23 V, V
Test Conditions
3
S
S
GS
= 15 A
= 30 A
GS
= 10 V. 100% test at L=0.3 mH, I
= 10 V. 100% test at L=0.3 mH, I
(Note 2)
(Note 2)
d. 120 °C/W when mounted on a
b. 50 °C/W when mounted on
Type
θJC
minimum pad of 2 oz copper
Q1
Q2
Q1
Q2
Q1
Q2
a 1 in
is guaranteed by design while R
AS
2
AS
pad of 2 oz copper
= 15 A.
= 30 A.
Min
Typ
0.8
0.8
6.6
21
32
36
www.fairchildsemi.com
Max
1.2
1.2
34
51
13
58
θCA
is determined
Units
nC
ns
V

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