BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet - Page 10

• Manufacturer Part Number: BLA1011-200
• Description: MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-200,112

Philips Semiconductors
10. Abbreviations
9397 750 14634
Product data sheet
Table 9:
Acronym
I
LDMOS
RF
SMD
VSWR
Dq
Abbreviations
Description
quiescent drain current
Laterally Diffused Metal Oxide Semiconductor
Radio Frequency
Surface Mount Device
Voltage Standing Wave Ratio
Rev. 08 — 26 October 2005
BLA1011-200; BLA1011S-200
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Avionics LDMOS transistor
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