BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet - Page 5

• Manufacturer Part Number: BLA1011-200
• Description: MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-200,112

Philips Semiconductors
9397 750 14634
Product data sheet
Fig 5. Power gain and drain efficiency a functions of
Fig 7. Load impedance as a function of frequency (series components); typical values
(dB)
G
20
15
10
p
1020
5
0
V
frequency; typical values
V
DS
DS
= 2 %
= 36 V; I
= 36 V; I
1040
Dq
Dq
G
= 150 mA; P
= 150 mA; P
p
1060
L
L
= 200 W; t
= 200 W; t
(W)
Z
D
1080
L
1020
4
2
0
2
4
f (MHz)
mgw037
p
p
= 50 s;
= 50 s; = 2 %
1100
Rev. 08 — 26 October 2005
1040
80
60
40
20
0
(%)
D
BLA1011-200; BLA1011S-200
1060
Fig 6. Input Impedance as a function of frequency
(W)
R
X
Z
L
L
1080
i
5
4
3
2
1
0
1020
V
(series components); typical values
DS
= 2 %
f (MHz)
= 36 V; I
mgw039
1100
r
x
1040
i
i
Dq
= 150 mA; P
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
1060
Avionics LDMOS transistor
L
= 200 W; t
1080
f (MHz)
p
mgw038
= 50 s;
1100
5 of 13