BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet - Page 8

MOSFET Power BULK TNS-MICP

BLA1011-200

Manufacturer Part Number
BLA1011-200
Description
MOSFET Power BULK TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA1011-200

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
SOT-502
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details
Other names
BLA1011-200,112

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLA1011-200
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLA1011-200
Manufacturer:
NXP
Quantity:
1 400
Part Number:
BLA1011-200
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BLA1011-200R
Manufacturer:
NXP
Quantity:
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Part Number:
BLA1011-200_BLA1011S-200
Manufacturer:
MINI
Quantity:
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Philips Semiconductors
9. Package outline
Fig 9. Package outline SOT502A
9397 750 14634
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502A
0.186
0.135
4.72
3.43
H
A
U 2
A
A
12.83
12.57
0.505
0.495
b
0.006
0.003
0.15
0.08
c
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
q
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 08 — 26 October 2005
1
2
0.045
0.035
1.14
0.89
0
BLA1011-200; BLA1011S-200
F
3
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
M
0.210
0.170
5.33
4.32
C
10 mm
L
M
C
0.133
0.123
3.38
3.12
p
L
p
B
F
0.067
0.057
1.70
1.45
Q
w 1
M
27.94
1.100
A
q
M
B
PROJECTION
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
34.16
33.91
1.345
1.335
EUROPEAN
M
U 1
Avionics LDMOS transistor
E 1
0.390
0.380
9.91
9.65
U 2
c
Q
0.25
0.01
w 1
ISSUE DATE
99-12-28
03-01-10
0.51
0.02
w 2
E
SOT502A
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