BUK7514-55A NXP Semiconductors, BUK7514-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7514-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7514-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7514-55A,127

NXP Semiconductors
BUK7514-55A
Product data sheet
Fig 6.
Fig 8.
Fig 10. Forward transconductance as a function of
R
(mΩ)
DS(on)
(A)
g
(S)
I
D
fs
200
160
120
80
40
17
13
30
20
10
0
9
5
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
drain current; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
V
0
6
0
j
j
DS
V
= 25 °C
= 25 °C
GS
> I
(V) = 20
D
20
2
x R
10
DSon
15.0
40
4
14
60
6
18
80
All information provided in this document is subject to legal disclaimers.
8
V
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
003aaf241
V
003aaf243
003aaf245
GS
I
DS
D
(V)
(A)
(V)
100
10
22
Rev. 2 — 26 April 2011
Fig 7.
Fig 9.
Fig 11. Normalized drain-source on-state resistance
R
(mΩ)
DS(on)
(A)
I
a
D
100
2.0
1.5
1.0
0.5
30
25
20
15
10
80
60
40
20
0
0
−100
of drain current; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Drain-source on-state resistance as a function
V
Transfer characteristics: drain current as a
5
0
V
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
GS
> I
(V) = 5.5
D
15
2
x R
T
j
DSon
= 175 °C
0
25
4
BUK7514-55A
T
35
j
6
= 25 °C
100
6.0
© NXP B.V. 2011. All rights reserved.
T
45
8
j
(°C)
003aaf242
003aaf244
V
003aaf246
6.5
7.0
7.5
8.0
10.0
I
GS
D
(A)
(V)
200
55
10
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