BUK7514-55A NXP Semiconductors, BUK7514-55A Datasheet - Page 9

• Manufacturer Part Number: BUK7514-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7514-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7514-55A,127

NXP Semiconductors
8. Revision history
Table 7.
BUK7514-55A
Product data sheet
Document ID
BUK7514-55A v.2
Modifications:
BUK7514_7614-55A_1 20000701
Revision history
Release date
20110426
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7514-55A separated form data sheet BUK7514_7614-55A_1.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 2 — 26 April 2011
N-channel TrenchMOS standard level FET
Change notice
-
-
BUK7514-55A
Supersedes
BUK7514_7614-55A_1
-
© NXP B.V. 2011. All rights reserved.
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