BUK7514-55A NXP Semiconductors, BUK7514-55A Datasheet - Page 7

• Manufacturer Part Number: BUK7514-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7514-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7514-55A,127

NXP Semiconductors
BUK7514-55A
Product data sheet
Fig 12. Gate-source threshold voltage as a function of
Fig 14. Input, output and reverse transfer capacitances
V
GS(th)
(nF)
(V)
C
5
4
3
2
1
0
−100
4
3
2
1
0
10
junction temperature
as a function of drain-source voltage; typical
values
I
V
D
−2
GS
C
C
C
= 1 mA; V
oss
iss
rss
= 0 V; f = 1 MHz
10
−1
DS
0
= V
maximum
GS
minimum
typical
1
100
10
T
All information provided in this document is subject to legal disclaimers.
j
V
(°C)
003aaf247
003aaf249
DS
(V)
200
10
Rev. 2 — 26 April 2011
2
Fig 13. Sub-threshold drain current as a function of
Fig 15. Gate-source voltage as a function of gate
(A)
I
D
V
(V)
10
10
10
10
10
10
GS
10
−1
−2
−3
−4
−5
−6
8
6
4
2
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
N-channel TrenchMOS standard level FET
= 25 °C; V
= 25 °C; I
10
1
D
DS
= 50 A
= V
20
2 %
2
V
DS
BUK7514-55A
GS
= 14 V
30
typical
3
V
© NXP B.V. 2011. All rights reserved.
40
98 %
4
DS
Q
003aaf248
V
003aaf250
GS
G
= 44 V
(nC)
(V)
50
5
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