BUK9515-100A NXP Semiconductors, BUK9515-100A Datasheet - Page 5

• Manufacturer Part Number: BUK9515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9515-100A,127

NXP Semiconductors
6. Characteristics
Table 6.
BUK9515-100A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
I
I
V
V
V
V
V
V
V
V
V
T
V
R
measured from contact screw on
mounting base to centre of die;
T
measured from drain lead 6 mm from
package to centre of die; T
measured from source lead to source
bond pad; T
I
I
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C
= 25 °C
= 75 A; V
= 25 A; V
= 75 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 100 V; V
= 100 V; V
= 30 V; R
= 10 V; V
= -10 V; V
= 4.5 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 3 — 19 April 2011
D
D
GS
GS
j
S
DS
DS
DS
DS
D
= 25 °C
/dt = -100 A/µs;
D
= 25 A; T
= 25 A; T
DS
L
DS
DS
= 25 A; T
= 0 V; T
= 0 V; T
GS
GS
= V
= V
= V
= 25 A; T
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
j
= 0 V; T
= 25 °C
= 0 V; T
= 30 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
j
j
j
= 25 °C
= 25 °C
= 175 °C
= 25 °C
j
j
j
j
j
j
= 25 °C
= -55 °C
= 175 °C
= 25 °C
j
= 25 °C
GS
= 25 °C
j
j
= 25 °C
j
j
j
j
= 175 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9515-100A
Min
100
89
1
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
11.5
12
6500
550
325
45
130
400
130
3.5
4.5
7.5
1.1
0.85
60
0.24
© NXP B.V. 2011. All rights reserved.
660
195
Max
-
-
2
2.3
-
500
10
100
100
16
40.5
14.4
15
8600
400
65
560
190
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
V
ns
µC
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