BUK9515-100A NXP Semiconductors, BUK9515-100A Datasheet - Page 6

• Manufacturer Part Number: BUK9515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9515-100A,127

NXP Semiconductors
BUK9515-100A
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
DS(on)
(A)
I
14.5
13.5
12.5
11.5
10.5
D
250
200
150
100
50
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
3
j
j
= 25 °C
= 25 °C
V
2
GS
5
(V) = 10
4
5
7
6
9
All information provided in this document is subject to legal disclaimers.
8
V
003aaf368
003aaf370
V
GS
DS
(V)
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
(V)
10
11
Rev. 3 — 19 April 2011
Fig 8.
Fig 10. Transfer characteristics: drain current as a
R
(mΩ)
DS(on)
(A)
I
D
100
19
17
15
13
11
80
60
40
20
0
of drain current; typical values
function of gate-source voltage; typical values
T
Drain-source on-state resistance as a function
V
0
0
j
DS
= 25 °C
V
GS
> I
N-channel TrenchMOS logic level FET
(V) = 3.0
D
20
x R
T
1
3.2
3.4
3.6
4.0
5.0
j
= 175 °C
DSon
40
BUK9515-100A
2
60
T
j
= 25 °C
3
© NXP B.V. 2011. All rights reserved.
80
V
003aaf369
003aaf371
GS
I
D
(V)
(A)
100
4
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