PSMN035-150P NXP Semiconductors, PSMN035-150P Datasheet - Page 5

• Manufacturer Part Number: PSMN035-150P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-150P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN035-150P,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN035-150P_4
Product data sheet
Symbol
R
R
Fig 5.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to solder point as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient vertical in still air
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.05
0.02
0.2
0.1
Single Pulse
10
−5
Rev. 04 — 16 November 2009
10
−4
Conditions
see
N-channel TrenchMOS SiliconMAX standard level FET
10
Figure 5
−3
10
−2
P
10
t
−1
p
PSMN035-150P
T
Min
-
-
t
003aaa018
p
(s)
δ =
T
t
t
p
1
-
Typ
0.6
© NXP B.V. 2009. All rights reserved.
Max
-
60
Unit
K/W
K/W
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