PSMN035-150P NXP Semiconductors, PSMN035-150P Datasheet - Page 7

• Manufacturer Part Number: PSMN035-150P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-150P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN035-150P,127

NXP Semiconductors
PSMN035-150P_4
Product data sheet
Fig 6.
Fig 8.
I
(A)
D
(A)
I
D
10
10
10
10
10
10
50
40
30
20
10
−2
−3
−4
−5
−6
−7
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
1
min
0.4
2
0.8
V
GS
= 10 V
3
typ
1.2
8 V
4
V
1.6
max
GS
003aaa019
003aaa024
V
4.6 V
4.4 V
DS
4.8 V
(V)
5.2 V
5.4 V
5 V
(V)
6 V
Rev. 04 — 16 November 2009
5
2
N-channel TrenchMOS SiliconMAX standard level FET
Fig 7.
Fig 9.
g
(S)
fs
(A)
I
D
50
40
30
20
10
50
40
30
20
10
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
V
DS
> I
D
10
2
× R
DSon
T
175 °C
j
PSMN035-150P
= 25 °C
20
4
T
T
30
j
6
j
= 25 °C
= 175 °C
© NXP B.V. 2009. All rights reserved.
40
8
003aaa020
V
003aaa025
I
GS
D
(A)
(V)
50
10
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