STI12N65M5 STMicroelectronics, STI12N65M5 Datasheet - Page 17

• Manufacturer Part Number: STI12N65M5
• Description: MOSFET N-CH 650V 8.5A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STI12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11326-5

STD/F/I/P/U12N65M5
6
Revision history
Table 9.
24-Feb-2009
27-Feb-2009
21-Jan-2010
29-Jun-2010
Date
Document revision history
Revision
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First release
Corrected package information on first page
Document status promoted from preliminary data to datasheet
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Doc ID 15428 Rev 4
Figure 15: Normalized on resistance vs temperature
updated
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