STI12N65M5 STMicroelectronics, STI12N65M5 Datasheet - Page 8

• Manufacturer Part Number: STI12N65M5
• Description: MOSFET N-CH 650V 8.5A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STI12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11326-5

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate resistance
V
GS(th)
(norm)
1.00
0.80
0.70
1.10
0.90
(V)
V
0.2
0.8
0.6
0.4
1.2
1.0
(µJ)
SD
-50
10
20
25
15
0
E
5
0
0
0
vs temperature
characteristics
(1)
-25
T
V
I
J
D
10
GS
=150°C
=5A
=10V
10
T
0
J
=-50°C
20
25
20
50
30
75
30
40
100
Eon
T
40
J
50
=25°C
T
Eoff
J
(°C)
Doc ID 15428 Rev 4
I
AM05584v1
SD
AM05581v1
AM05585v1
R
(A)
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
(norm)
DS(on)
(norm)
1.07
1.03
0.99
0.97
0.95
1.05
1.01
0.93
DSS
2.1
1.9
1.5
0.7
0.5
1.7
1.3
1.1
0.9
-50
-50
temperature
-25
-25
V
I
D
GS
0
0
= 4.3 A
= 10 V
25
25
VDSS
50
50
STD/F/I/P/U12N65M5
75
75
vs temperature
100
100
125
T
J
(°C)
AM05501v2
AM05583v1
T
J
(°C)