STI12N65M5 STMicroelectronics, STI12N65M5 Datasheet - Page 7
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STI12N65M5
Manufacturer Part Number
STI12N65M5
Description
MOSFET N-CH 650V 8.5A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12N65M5.pdf
(18 pages)
Specifications of STI12N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 100V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11326-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STD/F/I/P/U12N65M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
V
1000
(V)
(pF)
(A)
100
12
14
12
10
10
I
GS
C
D
2
10
8
6
4
0
6
4
2
8
0
0
0
1
0.1
V
Output characteristics
DS
5
5
1
10
10
V
V
15
GS
DD
I
D
=10V
15
=520V
10
=4.3A
20
20
25
100
7V
25
30
V
6V
5V
GS
V
Q
V
Doc ID 15428 Rev 4
DS
DS
g
AM05575v1
AM05578v1
AM05579v1
(nC)
(V)
480
320
400
80
0
240
160
(V)
Ciss
Crss
Coss
Figure 9.
Figure 13. Output capacitance stored energy
E
R
oss
DS(on)
0.28
0.38
0.33
0.23
0.43
0.18
0.13
0.08
(A)
(Ω)
(µJ)
12
10
1.5
I
4.0
2.5
2.0
1.0
3.5
3.0
0.5
D
8
4
2
6
0
0
0
0
0
Transfer characteristics
1
100
2
2
200 300
3
4
4
Electrical characteristics
6
5
400
6
8
500 600
7
10
8
9
V
GS
AM05576v1
AM05577v1
AM05580v1
I
V
D
(V)
DS
(A)
(V)
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