STI12N65M5 STMicroelectronics, STI12N65M5 Datasheet - Page 5

• Manufacturer Part Number: STI12N65M5
• Description: MOSFET N-CH 650V 8.5A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STI12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11326-5

STD/F/I/P/U12N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
t
c
SD
d
t
RRM
RRM
r
I
Q
Q
(off)
f
SD
t
t
(v)
(v)
(i)
rr
rr
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15428 Rev 4
I
I
V
I
V
(see
V
R
(see
(see
SD
SD
SD
DD
DD
DD
G
= 8.5 A, V
= 8.5 A, di/dt = 100 A/µs
= 8.5 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure
Figure
Test conditions
Test conditions
24)
21)
24)
GS
GS
D
j
= 150 °C
= 5 A,
= 10 V
= 0
Figure
24)
Electrical characteristics
Min.
Min.
-
Typ.
Typ.
230
280
2.2
2.7
9.5
19
19
28
24
34
Max. Unit
Max
8.5
1.5
34
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/18
A
A
V
A
A