NTTFS4928NTAG ON Semiconductor, NTTFS4928NTAG Datasheet - Page 4

• Manufacturer Part Number: NTTFS4928NTAG
• Description: MOSFET N-CH 30V 41A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4928NTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 913pF @ 15V
• Power - Max: 810mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 11.8 A
• Power Dissipation: 2.12 W
• Mounting Style: SMD/SMT
• Fall Time: 4.4 ns
• Gate Charge Qg: 8 nC
• Rise Time: 25.5 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.015
0.014
0.013
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.011
100
90
80
70
60
50
40
30
20
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
0
−50
3
10 V
Figure 5. On−Resistance Variation with
−25
I
V
Figure 1. On−Region Characteristics
D
V
GS
4
= 20 A
DS
Figure 3. On−Resistance vs. V
T
1
= 10 V
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
5
Temperature
25
2
V
6
T
GS
J
50
= 25°C
(V)
7
3
75
TYPICAL CHARACTERISTICS
8
I
D
100
V
= 20 A
GS
4
GS
= 2.5 V
9
http://onsemi.com
125
4.0 V
3.5 V
3.0 V
4.5 V
5
10
150
4
10,000
0.019
0.017
0.015
0.013
0.009
0.007
0.005
0.003
1,000
0.011
100
100
90
80
70
60
50
40
30
20
10
10
0
5
1
10
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
V
T = 25°C
20
DS
V
V
Figure 2. Transfer Characteristics
DS
= 10 V
GS
10
30
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
2
I
D
T
T
, DRAIN CURRENT (A)
40
T
J
J
J
= 125°C
= 150°C
= 85°C
Gate Voltage
15
vs. Voltage
V
V
50
GS
GS
T
J
= 4.5 V
= 10 V
3
= 25°C
60
20
T
J
70
= −55°C
V
GS
T
4
J
80
= 125°C
25
= 0 V
90
100
30
5