NTTFS4928NTAG ON Semiconductor, NTTFS4928NTAG Datasheet - Page 5

• Manufacturer Part Number: NTTFS4928NTAG
• Description: MOSFET N-CH 30V 41A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4928NTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 913pF @ 15V
• Power - Max: 810mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 11.8 A
• Power Dissipation: 2.12 W
• Mounting Style: SMD/SMT
• Fall Time: 4.4 ns
• Gate Charge Qg: 8 nC
• Rise Time: 25.5 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
1200
1000
1000
0.01
100
800
600
400
200
100
0.1
10
10
1
0
1
0.1
0
1
0 V < V
Single Pulse
T
Figure 9. Resistive Switching Time Variation
R
Thermal Limit
Package Limit
C
Figure 11. Maximum Rated Forward Biased
DS(on)
= 25°C
V
V
I
D
V
GS
DD
V
GS
= 15 A
5
DS
DS
Figure 7. Capacitance Variation
Limit
= 10 V
= 15 V
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
< 20 V
C
C
C
oss
rss
iss
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
1
15
10
20
10
TYPICAL CHARACTERISTICS
T
V
J
GS
= 25°C
25
= 0 V
10 ms
100 ms
1 ms
10 ms
dc
http://onsemi.com
t
t
t
t
d(off)
r
d(on)
f
100
30
100
5
11
10
30
25
20
15
10
18
22
20
16
14
12
10
9
8
7
6
5
4
3
2
1
0
5
0
8
6
4
2
0
25
0
0.1
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
V
T
Q
T
GS
J
J
gs
0.2
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
2
V
= 0 V
SD
Starting Junction Temperature
Figure 8. Gate−to−Source and
50
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
0.3
4
Q
gd
0.4
6
75
0.5
Q
T
8
0.6
100
10
0.7
12
V
V
I
0.8
D
T
GS
DD
I
125
J
D
= 20 A
= 25°C
= 20 A
= 10 V
= 15 V
14
0.9
1.0
16
15