MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 180

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 123: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping
Command
C K E
CK#
CK
NOP
T0
Notes:
NOP
T1
1. AL = 0, WL = 5,
NOP
NOP
T2
Short CKE HIGH transition period (R
t ANPD
NOP
T3
t
ANPD = 4.
NOP
T4
NOP
TT
T5
change asynchronous or synchonous)
NOP
T6
t ANPD
NOP
T7
t XPDLL
NOP
T8
NOP
T9
Indicates A Break in
Time Scale
Ta0
NOP
Ta1
NOP
Transitioning
Ta2
NOP
NOP
Ta3
Don’t Care
Ta4
NOP