MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 42

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 17: Input Signal
AC Overshoot/Undershoot Specification
Table 23:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 18 on page 43)
Maximum peak amplitude allowed for undershoot area
(see Figure 19 on page 43)
Maximum overshoot area above V
Maximum undershoot area below V
0.925V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
0.575V
Control and Address Pins
Minimum V
Notes:
V
V
V
V
IH
IH
IL
IL
(
(
(
(
DC
AC
AC
DC
)
)
)
)
IL
and V
1. Numbers in diagrams reflect nominal values.
IH
levels
DD
SS
(see Figure 18 on page 43)
(see Figure 19 on page 43)
0.925V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
0.575V
–0.40V
1.90V
1.50V
0.0V
42
V
IL
DDR3-800
0.67 Vns
0.67 Vns
and V
0.4V
0.4V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
IH
levels with ringback
1Gb: x4, x8, x16 DDR3 SDRAM
DDR3-1066
0.5 Vns
0.5 Vns
0.4V
0.4V
DDR3-1333
©2006 Micron Technology, Inc. All rights reserved.
0.4 Vns
0.4 Vns
0.4V
0.4V
V
V
pulse width
V
V
V
V
V
V
pulse width
V
V
V
V
SS
DD
DD
IH
IH
IL
IL
SS
REF
REF
REF
REF
(
(
(
(
DC
AC
Q + 0.4V narrow
Q
- 0.4V narrow
AC
DC
+ AC noise
+ DC error
- DC error
- AC noise
)
)
)
)
DDR3-1600
0.33 Vns
0.33 Vns
0.4V
0.4V