MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 90

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 42: Tangent Line for
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
V
V
V
V
IL
IL
IH
IH
(
(
DC
AC
(
(
AC
DC
V
Notes:
) MAX
) MAX
REF
) MIN
) MIN
DQS#
V
DQS
DD
CK#
(
V
DC
CK
Q
SS
)
1. Both the clock and the strobe are drawn on different time scales.
DC to V
DC to V
region
region
t
DH (DQ – Strobe)
REF
REF
Hold slew rate
Hold slew rate
falling signal
rising signal
t DS
Tangent
line
t DH
=
=
90
ΔTR
Tangent line (V
Tangent line (V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Nominal
REF
IH
ΔTR
ΔTF
line
1Gb: x4, x8, x16 DDR3 SDRAM
[
DC
[
DC
Tangent
] MIN - V
t DS
] - V
line
IL
[
DC
] MAX)
REF
t DH
[
DC
])
©2006 Micron Technology, Inc. All rights reserved.
ΔTF
Speed Bin Tables
Nominal
line