SJDP120R085 SEMISOUTH, SJDP120R085 Datasheet - Page 3

• Manufacturer Part Number: SJDP120R085
• Description: JFET, SIC, N-ON, 1200V, 27A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJDP120R085

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 27A
• On Resistance Rds(on): 0.085ohm
• Power Dissipation Pd: 114W

SJDP120R085 Rev 1.4
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0
0
0.0
0
I
I
D
D
= f(V
= f(V
V
Figure 5. Gate Current
V
DS
DS
V
I
DS
, Drain-Source Voltage (V)
GS
DS
G
1
, Drain-Source Voltage (V)
1
); T
= f(V
); T
, Gate-Source Voltage (V)
0.5
j
j
= 150 ° C; parameter: V
= 25 ° C; parameter: V
GS
); parameter: T
2
2
1.0
3
150
3
25
o
j
o
C
C
1.5
GS
4
GS
4
-1.0 V
-2.0 V
0.0 V
2.0 V
1.0 V
-1.0 V
-2.0 V
2.0 V
1.0 V
0.0 V
PRELIMINARY
2.0
5
5
3/7
Figure 4. Typical Transfer Characteristics
Figure 2. Typical Output Characteristics
Figure 6. Drain-Source On-resistance
1.00
0.10
0.01
40
35
30
25
20
15
10
70
60
50
40
30
20
10
I
5
0
0
R
D
-4.00
DS(on)
= f(V
0
0
I
D
= f(V
V
DS
V
= f(I
DS
GS
); T
, Drain-Source Voltage (V)
GS
, Gate-Source Voltage (V)
D
1
j
); V
); V
20
= 100 ° C; parameter: V
I
D
GS
DS
-2.00
, Drain Current (A)
SJDP120R085
= 2.0; parameter: T
= 5 V; T
2
150
Silicon Carbide
o
40
C
j
= 25 ° C
3
0.00
100
o
C
GS
60
j
4
May 2011
-1.0 V
-2.0 V
0.0 V
1.0 V
25
2.0 V
o
C
2.00
80
5