SJDP120R085 SEMISOUTH, SJDP120R085 Datasheet - Page 2

• Manufacturer Part Number: SJDP120R085
• Description: JFET, SIC, N-ON, 1200V, 27A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJDP120R085

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 27A
• On Resistance Rds(on): 0.085ohm
• Power Dissipation Pd: 114W

Off Characteristics
Drain-Source Blocking Voltage
Total Drain Leakage Current
Total Gate Reverse Leakage
On Characteristics
Drain-Source On-resistance
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related
Switching Characteristics
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ELECTRICAL CHARACTERISTICS
SJDP120R085 Rev 1.4
Parameter
Symbol
R
I
V
R
BV
G(FWD)
C
C
I
I
C
C
Q
Q
DS(on)
E
E
E
E
GS(th)
R
DSS
GSS
E
E
Q
G(on)
t
t
t
t
o(er)
on
t
off
t
on
t
off
t
oss
rss
iss
on
off
on
off
r
f
r
f
gs
gd
G
ts
ts
DS
g
f = 1 MHz, drain-source shorted
V
V
V
V
DS
DS
V
V
Inductive Load, T
Gate Driver = +15V, -15V,
Gate Driver = +15V, -15V,
V
DD
GS
Inductive Load, T
PRELIMINARY
V
V
GS
GS
I
I
V
V
DS
D
D
V
= 1200 V, V
= 1200 V, V
GS
DS
DS
DS
= 100 V, V
= -15 V, V
DS
= 17 A, V
= 17 A, V
= -15 V, I
>2.7V; See Figure 5
= 600 V, I
V
Conditions
= -15 V, V
= 1 V, I
= 600 V, I
See Figure 13
= 600 V, I
See Figure 13
f = 100 kHz
V
T
Rg
Rg
T
V
= 0 V to 600 V,
GS
T
T
GS
j
j
GS
2/7
j
j
= 100 ° C
(EXT)
(EXT)
= 150
= 25 ° C
= + 2.5 V
= 25
= -15 V
= +2 V
D
= 5 Ω
= 5 Ω
D
GS
GS
DS
GS
o
D
D
GS
GS
= 30 mA
D
o
C
= 600 µA
DS
C
= 17 A,
= 17 A,
j
= 2 V,
= 2 V,
j
= 10 A,
= 1200V
= 150
= -15 V,
= 25
= -15 V,
= -15 V,
= 0V
o
o
C
C
1200
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SJDP120R085
Silicon Carbide
Value
0.075
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ
0.11
100
-0.1
-0.1
255
160
130
290
165
125
290
0.5
10
40
80
80
50
32
27
-5
6
2
-
0.085
Max
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
May 2011
Unit
mA
µA
µA
pF
nC
ns
µJ
ns
µJ
V
V