SJDP120R085 SEMISOUTH, SJDP120R085 Datasheet - Page 5

JFET, SIC, N-ON, 1200V, 27A, TO247

SJDP120R085

Manufacturer Part Number
SJDP120R085
Description
JFET, SIC, N-ON, 1200V, 27A, TO247
Manufacturer
SEMISOUTH
Datasheet

Specifications of SJDP120R085

Rohs Compliant
YES
Transistor Type
JFET
Breakdown Voltage Vbr
1200V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
27A
On Resistance Rds(on)
0.085ohm
Power Dissipation Pd
114W
SJDP120R085 Rev 1.4
1.E+00
1.E-01
1.E-02
1.E-03
1.E-06
1%
0.5%
0.2%
2%
5%
50%
90%
70%
30%
10%
1.E-05
Figure 13. Inductive Load Switching Circuit
Figure 14. Transient Thermal Impedance
Z
th(jc)
Single Switch Configuration
= f(t
PRELIMINARY
1.E-04
P
); parameter: Duty Ratio
t
p
, Pulse Width (s)
5/7
1.E-03
1.E-02
SJDP120R085
Silicon Carbide
1.E-01
May 2011

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