SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet - Page 4

• Manufacturer Part Number: SJEP120R063
• Description: JFET, SIC, N-OFF, 1200V, 30A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063

• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Continuous Drain Current Id: 30A

May 2009
1.E+04
1.E+03
1.E+02
1.E+01
1.50
1.25
1.00
0.75
0.50
Figure 7. Drain-Source On-resistance
Figure 11. Gate Threshold Voltage
Figure 9. Typical Capacitance
0
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
C = f(V
R
0
T
DS(ON)
Typical
j
, Junction Temperature (
Max
V
T
DS
50
300
DS
j
, Junction Temperature (° C)
, Drain-Source Voltage (V)
= f(T
); V
50
V
GS
th
j
); parameter: I
= f(T
= 0 V; f = 1 MHz
100
600
j
)
100
C
200mA
C
rss
iss
GS
900
150
o
150
C)
-1.5mV/
C
oss
1000mA
1200
o
200
200
C
PRELIMINARY
Rev 1.3
Figure 8. Drain-Source On-resistance
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 12. Drain-Source Leakage
Q
0.052
0.051
0.050
0.049
0.048
0.047
0.046
0.045
0.044
0.043
0.042
g
0
= f(V
I
0
D
BV
Figure 10. Gate Charge
= f(V
0.1
DS
GS
R
, Drain-Source Blocking Voltage (V)
); V
DS(ON)
DS
Q
I
); V
GS
DS
15
g
300
, Total Gate Charge (nC)
, Gate-Source Current (mA)
= f(I
= 600V; I
GS
1.0
= 0V; parameter: Tj
SJEP120R063
GS
); T
Silicon Carbide
D
600
j
30
= 25
10.0
= 5A, T
o
C
j
= 25
100.0
900
45
o
125
C
175
25
o
o
o
C
C
C
1000.0
1200
60
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