SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet - Page 7

• Manufacturer Part Number: SJEP120R063
• Description: JFET, SIC, N-OFF, 1200V, 30A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063

• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Continuous Drain Current Id: 30A

Silicon Carbide
PRELIMINARY
SJEP120R063
Published by
SemiSouth Laboratories, Inc.
201 Research Boulevard
Starkville, MS 39759 USA
© SemiSouth Laboratories, Inc. 2008
Information in this document supersedes and replaces all information previously supplied.
Information in this document is provided solely in connection with SemiSouth products. SemiSouth
Laboratories, Inc. reserves the right to make changes, corrections, modifications or improvements, to this
document without notice.
No license, express or implied to any intellectual property rights is granted under this document.
Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are
not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining
applications, nor in products or systems where failure or malfunction may result in personal injury, death, or
property or environmental damage.
May 2009
Rev 1.3
7/7